heavily dope meaning in Chinese
重掺杂
Examples
- The result is showed that the value of square resistence is 30 . 2 o in heavily doping area and 100 . 2o in lightly doping area
实验结果显示，重掺杂区和轻掺杂区的平均方块电阻分别为30 . 2和100 . 2 ，相差70 。 - The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。 - In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current . a new interpretation to this phenomenon was given . this
在实验中我们还观察到，在高vce和大电流下，重掺杂基区gesihbt出现负阻现象，我们对这一现象进行了新的解释，认为这是由热电负反馈导致的。 - Then , the effect of heavily doped boron on ig of czochralski silicon was also investigated . it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature , ramping annealing respectively . for conventional high - low - high three - step ig annealing , the dz becomes narrower and bmd density is higher in hb samples than that in lb samples , as a result of hb enhancing oxygen precipitation
结果显示，单步高温热处理时重掺硼样品不能形成洁净区；降温退火中，降温速度较为缓慢( 3 / min )时能生成一定量的氧沉淀，但没有洁净区形成；普通高?低?高三步热处理过程中，形成明显的洁净区，但相对轻掺样品而言，洁净区较窄，氧沉淀密度明显偏高，说明重掺硼样品吸杂能力强。 - As is known to all , one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate . generally , the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process . also , in order not to increase the thermal noise of device , the base is always heavily doped
众所周知， sigehbt的主要特点之一就是在si材料衬底上生长的sige材料是应变的，为了在后续的高温退火工艺中不发生晶格驰豫现象，通常要求器件的基区要做的很薄，同时为了不增加器件的热噪音，通常sigehbt基区都是高掺杂的。